PART |
Description |
Maker |
IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET technology, Ultra Low On-Resistance, P-Channel MOSFET generation v technology
|
International Rectifier
|
IRF7404TRPBF |
generation v technology
|
International Rectifier
|
IRF7304 |
Generation V Technology
|
International Rectifier
|
IRLML2402GTRPBF |
Generation V Technology
|
International Rectifier
|
NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
IKW15N120T2 IKW15N120T208 |
Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
|
Infineon Technologies AG
|
SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG Infineon Technologies A...
|
MC7412 |
N-Channel 20V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|